GaN-HEMT Integrated Switch LNA Module for 5G Mobile Communications

An integration of a two-stage low noise amplifier along with a single pole double throw switch being part of the transceiver front-end using GaN HEMT technology is presented in this paper. The designed standalone LNA has a high gain of 24.4 dB and a low noise figure of 1.25 dB. The LNA is integrated with a SPDT switch with an insertion loss of 0.7 dB and an isolation of 28 dB. Hybrid integration of the two circuits yields a compact demonstrator. The integrated module achieves promising results with a gain of 20.7 dB and a noise figure of 2.6 dB in the receiving mode.