A Differential Travelling-Wave Amplifier in a 22nm FD-SOI CMOS Technology

This work presents a differential travelling-wave amplifier (TWA) fabricated in a 22nm FD-SOI CMOS technology. With a transit frequency
$(\mathbf{f}_{\mathbf{t}})$
and a maximum frequency of oscillation
$(\mathbf{f}_{\max})$
of 353 and 370 GHz for n-channel devices, respectively. The proposed TWA is formed by seven unity gain stages built by differential cascodes with a total power consumption of 230 mW. The paper analyses and discusses the challenges of layout-parasitics influencing the even- and odd-mode performance and proposes an advantageous routing of the drain and gate lines of the differential TWA.