Memristor Based CAM Cell Designs and Analaysis of Their Performance

A resistance with memory is what is known and defined as memristor. The incidence of the two-terminal device was found in the year 1971. Memristor is a non-volatile, expandable, high speed, high packing density, and low-power device. It will hold/retain the data, even when the power goes off. It is used in various applications like programmable logic, remote sensing, neuromorphic system, and low power applications. Random Access Memory (RAM) executes search operation by means of memory address and returns the data from the location stored. Content addressable memory (CAM) return the location of searched data by associating it with the kept data. CAM is a superior category of memory, which is used by searching applications, like caches in microprocessors, and networking. CAM cells makes parallel examination over all stowed data and finds out the matched data in one cycle. In this paper, we make a relative study on the CAM cells and the consequence of implementation of Memristor in CAM cells and analyze the performance of the design. We find that 1T-1M gives an improvement of 99% when compared to other CAM models discussed.