Comparative Analysis of Different Characteristics of a Double Gate MOS Capacitor

This particular study covers the analysis of both n and p channel double gate MOSCap (Metal Oxide Semiconductor Capacitor) structure. Several MOSCap properties such as High Frequency CV Characteristics, Electrostatic Potential, Surface Potential versus Gate Bias and Energy Band diagrams are being investigated for different values of gate oxide thickness and different metal oxide materials i.e different dielectric constant values. The effect of body doping is also discussed in this particular study. All these simulations mentioned above are carried out in nanoHUB tool. Lower dielectric thickness gives better characteristics.