A D-Band Reflective-Type Phase Shifter Using a SiGe PIN Diode Resonant Load

This work presents a D-band phase shifter which utilizes a one-bit phase inverter (PI), followed by two cascaded reflective-type phase shifters (RTPSs). The PI uses two identical cascode amplifiers and a triaxial balun for compact form factor and to provide identical loading in both states. The RTPSs use SiGe PIN diodes for their resonant loads due to their naturally high-Q and tuning range. The phase shifter is implemented in a 90-nm SiGe BiCMOS technology platform, and achieves insertion loss < 5.5 dB with a 360° phase shift range, for frequencies up to 145 GHz. By using dual voltage control, the insertion loss variation is kept within ±0.9 dB by selecting the appropriate points. This phase shifter achieves competitive performance in terms of insertion loss, power consumption, and amplitude error while operating over a wide bandwidth.