Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate

In this work we investigate the benefits of amorphous Multilayer (ML) deposition in Phase-Change Memory (PCM). Different ML stacks based on Ge
1
Sb
2
Te
4
composition are developed and characterized by physico-chemical analyses, providing a spectacular demonstration of highly-textured crystalline layer after high thermal budget and of higher layer uniformity. ML PCM device performances are evaluated at statistical level in 16 kb arrays, showing a lower electrical parameters variability, best endurance results and lowest Bit Error Rate wrt equivalent bulk layer.