SPICE Based Compact Modeling of Spiral Inductor and MIM Capacitor for RF Circuit Simulations

The paper presents the modeling of a 1.66 nH spiral inductor and 1.01 pF MIM Capacitor (MIMCAP) fabricated in SCL
$0.18\ \ \mu\mathrm{m}$
bulk - Si technology for high - frequency applications. The paper covers a rigorous study of various RF performance metrics that are investigated using two - port S - parameter measurements. For spiral inductor modeling, the
$1- \pi$
model approach is followed and the MIMCAP model is developed based on the T - topology, which promises good accuracy. A detailed flow for parameter inter - conversion and value extraction from de - embedded two - port S - parameters to equivalent
$1-\pi$
and T circuit - topology is systematically presented. The model results are validated with the measured data from on - chip fabricated devices, and a good agreement within 2.5% of measurements over a frequency range of 2–6 GHz is obtained, thus enabling the applications in RF circuit designs.