Investigation of Single Event Transients in Buffer-Free GaN-on-SiC HEMT

Electrical behavior of the heavy ion particle strike - induced single event transients (SET) on QuanFINE based buffer - free (Without Buffer) HEMT is systematically investigated with well calibrated TCAD simulations. The absence of a thick and highly - doped buffer enables AlN to act as a back barrier thus facilitates better 2DEG confinement. Comparison of WOB with Fe - doped buffer (With Buffer) HEMT points towards the greater radiation tolerance of the WOB architecture which depicts a slower evolution of electron concentration and a delayed trigger. Further, the WOB reports 4% lower drain current shoot - up, 2% lower electric field degradation and 35% lower charge collection for linear energy transfer (LET) value of
$1\ \text{pC}/\mu\mathrm{m}$
. The heavy ion induced transient impact is explored as a function of strike location and LET values. The results demonstrate the excellent resilience to single event effects (SEE) and reliability offered by the WOB structure.