Heavy-Ion Induced Single Event Transients in Sub-7nm Bulk and SOI NSFETs

In this paper, we investigate and report single event transient (SET) effects caused by heavy-ion on bulk and SOI nanosheet FETs (NSFETs) using Sentaurus TCAD heavy-ion model. The SET current in bulk and SOI NSFETs for different fin widths have also been compared and reported. Simulation results exhibit that SET peak current is higher in bulk NSFET compared to SOI NSFET, owing to its larger volume for charge collection in bulk devices. We have also considered different locations for a heavy-ion strike to study the worst-case scenario of SET current in NSFETs. It can be concluded that SET current increases when the location of heavy-ion strike shifts from the source contact to drain contact. In addition to this, the effect of the different angles of ion incidence on SET performance has been also analyzed. Finally, SET performance in bulk and SOI NSFETs has also been compared for different heavy-ion track radius.