Performance Analysis of n+ Pocket DG-JLFET with SiO2 and High-K Oxide Thin Layer for Biomedical Application

In this paper, a heavily doped n+pocket channel asymmetric Double Gate Junctionless Field Effect Transistor (DG-JLFET) with SiO
2
and high-k oxide thin layer-based biosensor for detecting pathogens, molecules, antigens, and enzymes efficiently has been developed. The nanogap cavity area is designed with silicon dioxide and high-k oxide thin layer. The charged and non-charged biomolecules that are trapped to the adhesion thin layer in the cavity influence the potential profile in the channel beneath the nanogap cavity area. Different gate oxides are used to analyze the suggested asymmetrical double gate JLFET with SiO
2
and high-k oxide thin layer in the nanogap cavity area. The device performance has been significantly improved when we used higher dielectric gate oxide. Different high-k thin oxide layers and different gate electrode materials are also used to analyze the device performance.