Could Silicon Solar Sensors Survive a Carrington-Type Event?

The objective of the present work is to study the effects of the damage produced by a Carrington-type event on silicon devices. Solar sensors were selected as an example for their simplicity. The Centro Atómico Constituyentes (CAC) method was applied to define the irradiation conditions. The results showed the extension of effects for this type of event on displacement-sensitive devices and will allow future satellite missions to design strategies to minimize radiation damage for this type of device in future satellite missions.