Electrical Performance of Large-Area Y2O3 Memristive Crossbar Array With Ultralow C2C Variability

Here, we report the electrical performance analysis of a Y
₂
O
₃
-based memristive crossbar array (MCA) of (
$30\,{\times }\,25$
) on a large Si (100) wafer having a 3-inch diameter by utilizing dual-ion beam sputtering (DIBS) system. The MCA is highly stable and exhibits repeatable and reproducible resistive switching responses in terms of consistent resistive switching voltages (
${V}_{{\mathrm {SET}}}$
and
${V}_{{\mathrm {RESET}}}$
). The devices in the MCA efficiently depict the impact of device area scaling on the switching voltage parameters. The fabricated devices also show low device-to-device (D2D) variability in
${V}_{{\mathrm {SET}}}$
(2.64%)
${V}_{{\mathrm {RESET}}}$
(10.13%) and ultralow cycle-to-cycle (C2C) variability in
${V}_{{\mathrm {SET}}}$
(0.2%) and
${V}_{{\mathrm {RESET}}}$
(1.07%). Furthermore, this work also experimentally probes the impacts of various input signal parameters such as applied voltage, compliance current, and pulsewidth (PW) on the variability parameters.