Study on Y2O3 based gate oxide Si MOS with various annealing ambient

In this study, zinc oxide (ZnO) doped yttrium (Y
2
O
3
) thin film was successfully prepared by liquid phase deposition (LPD). The samples annealed in different gas environments is used to observe the relationship between annealing environment and electrical characteristics. We found that samples annealed in air have the best electrical properties. Mixing different density of ZnO to Y
2
O
3
shows that ZnO doped with 25 % has the best electrical characteristics. The oxide capacitance (C
ox
), k value, interface trap level density (D
it
) and the leakage current density are 248.22 pF, 31.9, 1.08 × 10
¹²
eV
^-1
cm
^-2
and 5.62 × 10
^-6
A/cm
²
at + 5 V, respectively.