Enabling In-Memory Computations in Non-Volatile SRAM Designs

The rapid growth in development of neural networks has necessitated the requirement of large capacity on-chip SRAM’s for Machine Learning accelerators. This has resulted in SRAM’s occupying significant portion of the die area. Furthermore, due to increased short channel effects in advanced CMOS technology nodes, the Vt of the transistors are increased to reduce the leakage power effectively. Vt increase results in direct increase in V
_MIN
(minimum operating voltage) of the device. The conventional 6T SRAM with the use of RRAM(R) to store the bitcell storage node values and PTM(S) as a selector device (6T-2R-2S) can help in decoupling V
_MIN
and Vt requirement with minimum area overhead. Functionalities of 6T-2R-2S bitcell are investigated to present a 2T-2R-2S mode and SRAM-RRAM hybrid mode of operation, further utilized in performing Compute in Memory(CIM). The above functionalities can be presented in a 8T2R bitcell, that makes use of transistor in place of PTM. 2T-2R-2S/2T-2R mode is a fully non-differential mode of operation, leveraging only the NVM portion of the bitcell. Furthermore, SRAM-RRAM hybrid mode is proposed making use of the SRAM read port transistors to perform read operation of the data stored on the RRAM, during standby mode. The architecture study of set-associative cache made of 6T-2R-2S array is also presented. The 2T-2R-2S/2T-2R mode coupled with SRAM-only mode can be efficiently used to perform CIM for dot product and XNOR computation with co-locating the weights and activations stored onto the same bitcell. System level study highlighting energy efficiency and speedup along with the proposed CIM architecture’s analysis on CIFAR-10 dataset is presented. Design sensitivity analysis with respect to PTM and RRAM parameters is discussed for both the bitcells.