Improved gm and RTN Device Performance using Thick SOI in 22FDX® for Analog Applications

This work presents the effects of silicon film thickness on analog performance on a FDSOI transistor. The increase of silicon film thickness leads to higher carrier mobility with possible impact on electrostatic control. The optimum condition has been identified for T
Si
=16nm, with maximum mobility gain and -15% RTN noise reduction. Additionally, by connecting the front-gate and back-gate together, we show the possibility of further improving the intrinsic gain up to +36% and reducing the RTN noise by -45%.