Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels

The booming of IoT era has given rise to many revolutionary changes in our daily lives with new applications in family houses, healthcare, agriculture, and autonomous vehicles, just to name a few [1] [2] . In these emerging applications, various IoT communication protocols enable all of the connected objects to talk and interact. In this regard, Si-based RF technologies (e.g., bulk CMOS, SOI and SiGe HBT) are essential for the thriving IoT industry. However, it is difficult to co-integrate the Si-based RF components with IoT terminal products. To address these issues, exploitation of an appropriate fabrication scheme is needed.