2T-Pixel Sensors Array for on-Wafer in-Chamber DUV Sensing

A p-channel floating-gate-based DUV light detector and its sensing model are demonstrated in this work. The proposed DUV sensors array features 2T compact pixels and full compatibility to advanced CMOS logic process. In addition, a DUV-Induced charge emission model is proposed, where a field dependent emission efficiency is studied. A 2D array for in-situ DUV detection provides intensity distributions on wafer surface is successfully demonstrated.