A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs

A nanosized-metal-grain pattern-dependent model was proposed for work-function-fluctuation (WKF)-induced variability on the gate-all-around (GAA) silicon nanofin and nanosheet MOSFET (NF-FET and NS-FET). This model was developed by the perturbation of location metal grains with error correction (EC) and was validated by the 3D device simulation (3D-DS) with 5000 samples in low errors (error rate (ER) < 1%). The model can estimate the uncertainty of WKF-induced variability in huge patterns without executing 3D-DS to save the computational resources.