6 Stacked Ge0.95Si0.05 nGAAFETs without Parasitic Channels by Wet Etching

The 6 stacked Ge
0.95
Si
0.05
nanowires without parasitic channels are realized by NH
4
OH + H
2
O
2
wet etching. High I
ON
per stack and per footprint are achieved thanks to the nanowire conduction and the electrons populated in the high mobility L
4
valleys. The reduced SS of 80 mV/dec and improved I
ON
/I
OFF
of 1.5E5 are obtained by the removal of parasitic channels compared to the 7 stacked Ge
0.95
Si
0.05
nanowires with the parasitic channels in our previous work. The high I
ON
of 120 μA per stack (4600 μA/μm per channel footprint) at V
OV
= V
DS
= 0.5 V is reached among the Ge/GeSi 3D nFETs.