Towards the Characterization of Full ID-VG Degradation in Transistors for Future Analog Applications

Assessment of transistor degradation in analog circuits during aging effect is challenging due to the wide spread of operating points. This paper presents our proposed characterization approaches of full I
D
-V
G
degradation for large and nanoscale devices respectively. Threshold voltage shift and mobility degradation in large devices can be extracted simultaneously with fast measurement speed (t
m
=3µs). Based on this, full I
D
-V
G
degradation can be assessed intuitively. Impacts of individual defects on full I
D
-V
G
degradation in nanoscale devices are characterized with the proposed approach with high resolution. Thus this paper provides a helpful solution to the characterization of device degradation in analog circuits.