Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage

In this paper, we propose a novel characterization methodology to study dynamic R
ON
and V
TH
during a high voltage stress on the drain node of GaN-on-Si E-mode MOSc-HEMTs using a half-bridge configuration circuit and specific gate voltage waveforms. This novel setup enables to study simultaneously R
ON
and V
TH
during stress and recovery phases from 10µs to several kiloseconds. At 150°C a high carbon concentration in Carbon-doped GaN layer, reduces ON-Resistance degradation. Temperature dependent measurements show that R
ON
degradation is related to C
N
acceptor traps in the GaN:C layer. High voltage drain stress induces a combination of VTH drift and access region related dynamic RON effect.