Elevated Temperature Dependence of dc Characteristics of 2-D Flake Ga2O3 Transistors

The dc characteristics of quasi 2-dimensional Ga
2
O
3
nanolayer field effect transistors were examined over the temperature range up to ~327°C. The (100) plane β-Ga
2
O
3
flake was mechanically exfoliated from the side wall of (-201) plane β-Ga
2
O
3
bulk substrate and transferred onto a SiO2/Si substrate. The excellent high temperature transistor performance and air stability of quasi-2D β-Ga
2
O
3
makes these an appropriate candidate for high voltage nano electronics.