Frequency-Characterization and Modeling of AlGaN/GaN HEMTs for High-Power Applications

An accurate HEMT equivalent model extraction strategy is described and tested for the RF performance of AlGaN/GaN high-power devices. This method provides the extrinsic and intrinsic small-signal components, which are key in estimating its frequency response, from multi-bias S-parameters. After the DC+ RF characterization, the extraction is carried out from a 0.05 GHz to 38 GHz range with high model fidelity. This procedure shows that it is feasible to build a valid HEMT small-signal model as basis for subsequent large-signal development of millimetre-wave RF -GaN circuit integrated prototypes.