Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives

We investigate the effects of length (
${L}$
) and width (
${W}$
) scaling on the low-frequency noise characteristics of the ferroelectric tunnel junction (FTJ). The FTJ is composed of metal/ferroelectric/dielectric/semicondu- ctor (TiN/HfZrO
₂
/SiO
₂
/
${n}^{+}$
Si). In the high-resistance state, 1/
${f}$
noise increases proportionally to 1/
${W}^{\alpha }{L}^{\beta }$
(
$\alpha \cong ~1$
,
$\beta >1$
), whereas the shot noise has no scaling dependence. In the low-resistance state, the 1/
${f}$
noise of the FTJ shows a more sensitive dependence on
${L}$
scaling than
${W}$
scaling since the switching and conduction mechanisms are more affected by the process-induced damaged edge regions.