Apparent heat capacity model of the SiC MOSFET’s Aluminium top surface for short-circuits simulations

Short-Circuit (SC) event in SiC transistors are difficult to simulate by the shortness in time and strength in heating. One of the difficulty created by SC is the need to model the top aluminium melting. The method used in this paper is called the "apparent heat capacity", the heat capacity model takes into account the latent heat and absorb the same energy than during the fusion of the aluminium. Two models will be shown and will be compared in order to choose one for a SC simulation of a MOSFET. Once the model chosen, parameters of the model will need to be set. In order to do so, the chosen model will be used for solving the Stefan problem, so parameters can be tweak to have the less errors. Finally, the method will be implemented on Ansys on a test case representing a 1D-model of a SiC MOSFET chip.