Refractive Index of In1-x-yAlyGaxAs Lattice-Matched to InP

From ellipsometric measurements of eight different In
_1-x-y
Al
_y
Ga
_x
As grown semiconductor compositions, the parameters for the Tanguy model are fitted for each composition. From the fitted parameters, a generalized parameter set is derived for In
_1-x-y
Al
_y
Ga
_x
As compound semiconductors, being lattice-matched to InP. Due to the generalized parameter set, the wavelength dependent refractive index and absorption in the transparent and absorbing NIR and SWIR wavelength regime can be modeled.