Improvement of Short Channel Parameters using Double Gate Graphene Channel Field Effect Transistor

In recent years alternatives to MOSFET is in demand for nanoscale device designing. In this purview, lots of work needs to be carried out on graphene channel FET. The device using this 2-D material has promising abilities to replace the conventional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device. A double gate graphene FET is implemented using the Silvaco TCAD tool in this work. User-defined graphene material is used as a channel. The implemented device has a channel length of 18 nm with HfO
2
as di-electric material. The dual-gate structure shows improvement in subthreshold slope
$(\text{SS}) = 60.71\ \text{mV}/\text{decade}$
, I
ON
/I
oFF
ratio equals 126815422 and
$\text{DIBL}=1.94\ \text{mV}/\mathrm{V}$
as compared to the single gate and other nanoscale devices.