Improved Analog Performance of PZT Ferroelectric AlGaN/AlN/GaN E-Mode GR-MOSHEMT

In this article, the PZT ferroelectric AlGaN/AlN/GaN enhancement mode gate recessed MOS-HEMT is proposed on a Silicon substrate with improved DC characteristics. The PZT layer is deposited on the
$A{l_x}G{a_{(1 - x)}}N/AlN/GaN$
heterostructure with a two-dimensional electron gas (2-DEG). The
${Si_{3}N_{4}}$
nitride insulator with GaN provides a good surface interface. The ferroelectric gate-based dielectric of Pb(Zr,Ti)O3 is grown on the
${Al_{2}O_{3}}$
oxide layer and improves the device's performance. Due to ferroelectric material, a robust internal polarization field appears near the two-dimensional electron gas (2-DEG) at gate oxide and barrier layer interface. The different transfer and output characteristics of the PZT gate recessed device show an improvement for 30% of aluminum content compared to 20% and 25%. The ferroelectric layer modulates the 2-dimensional electron gas in the
$A{l_x}G{a_{(1 - x)}}N/AlN/GaN$
GR-MOSHEMT, and then it provides better-controlling ability than other conventional devices. PZT gate-based enhancement-mode MOSHEMT are promising candidates for RF, high-power, and high-frequency applications.