Dual Material Tri-Gate Schottky Barrier MOSFET

The scaling of silicon based doped devices has reached to verge of its limits because of the severity of short channel effects, increment in source/drain resistance, abrupt doping profile etc. below the 22nm technology node. To scale down the devices below the 22nm technology node, it is necessary to have control over these detrimental effects to avoid the failure of Moore’s Law. A potential solution for such issues is to use metal source drain technology, however, the ON state performance of such devices is very poor. In this work, new device architecture has been put forward to counter problems faced by the Nano devices below 22nm technology node. The proposed device uses three different metals at the gate and uses metal at source and drain. ION of the proposed Dual Material Tri-Gate Schottky Barrier MOSFET (DM-TG- SB-MOSFET) device has increased by 3.45×10
³
folds that of the conventional device. Besides this, there is a considerable improvement in ON-OFF ratio of current, subthreshold swing, transconductance and other performance measuring parameters.