Analytical model of Heterojunction Tunnel Field Effect Transistor incorporating the negative capacitance phenomenon

In this work, an accurate and computationally efficient analytical model for Negative Capacitance Tunnel Field Effect Transistor (NCTFET) is presented. The model discussed in this paper is based on capacitance matching and Landau-Khalatnikov equations implemented on conventional Tunnel Field Effect Transistor (TFET). The current-voltage model is developed by calculating the capacitance and voltage across ferroelectric layer. The ψ
s
calculated is used subsequently to obtain the charge and capacitance behavior. The results shows that there is a good match between modelling results and obtained from Synopsys TCAD simulations. The calculations includes various device parameters such as charges, V
FE
, drain current, subthreshold slope (SS). The impact of Fe material thickness is also seen in I
D
-V
G
characteristics of proposed device. The parameters analyzed from the reported model shows perfect matching with Synopsys TCAD simulations making it suitable for circuit simulations.