Abnormal On-Current Degradation Under Non-Conductive Stress in Contact Field Plate Lateral Double-Diffused Metal-Oxide- Semiconductor Transistor With 0.13-μm Bipolar-CMOS-DMOS Technology

In this study, abnormal on-current (I
_on
) degradation in n-type lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) after non-conductive stress (NCS) is investigated. The degradation is caused by electron injection into the insulator layer (IL) during stress. Moreover, I
_on
degradation reaches saturation within a short time after stress. Experimental data and technology computer aided design (TACD) simulations show that, after NCS, the contact field plate (CFP) induces carriers to inject into the IL above the drift region. It increases the overall on-resistance (R
_on
) and results in I
_on
degradation during turn-on.