A 6.23-bit FG-based Neuromorphic Synaptic Device with Extended Input Range by Linearity Improvement

In this paper, a neuromorphic synaptic device with single-poly floating gate (FG)-based multi-bit input is presented. In the basic 2C-1T structure, the input range is very limited due to non-linearity due to the characteristics of MOS. To address this issue, two MOSs are added as compensation current sources to improve linearity and increase the range of available input voltages. In the proposed 2C-3T structure, the range of available inputs is increased by five times, so input can be used from 1-bit to 2.5-bit. The proposed 2C-3T cells are fabricated using 180nm CMOS technology and exhibited a differential non-linearity (DNL) less than 1.29 least significant bit (LSB)