The Effect of Gate Work Function on Wide Band-Gap Sn-doped α-Ga2O3 Metal-Semiconductor Field-Effect Transistors

We present technology computer aided design (TCAD) results for wide band-gap Sn-doped Ga
2
O
з
α-metal-semiconductor field-effect transistors (MESFETs). In particular, the effect of gate work function on the electrical characteristics is demonstrated for the optimal choice of the gate electrode material.