New Single Event Transient phenomenon in 28FDSOI and its impact on hardening

This paper shows measurement of new Single Event Transient in FDSOI28 technology. These SETs come from layers beneath the Buried Oxide connected to active nodes through transistor back-gate (or bulk) contact. These back-gate structures are used for threshold voltage control of transistors in analog circuits. These specific transistors were embedded in an inverter chain with a SET detection apparatus manufactured in a test vehicle processed in FDSOI28 technology. Radiation experiments were performed as well as circuit and TCAD simulations to deepen our understanding of this phenomenon. These SETs have implications for radiation-hardening-by-design that are discussed in this paper.