Single-mode laser diode at 778-nm wavelength: effect of p-doping

An AlGaAs-GaAs double quantum well structure has been grown by metal-organic chemical vapor deposition. High p-doping of the cladding layer (4/spl times/10/sup 18/ cm/sup -3/) is used to optimize the performance of ridge waveguide laser diodes. A stable single-mode operation is obtained with output power of 120 mW at room temperature. The temperature constant T/sub 0/ is /spl sim/230 K. Improvements are explained by reduction of electron leakage and by the current self-distribution effect.