Flexible Nanocellulose Gated Pseudo-Diode for Neuromorphic Electronic Applications

Flexible nanocellulose-based solid-state electrolyte gated indium-tin-oxide (ITO) pseudo-diode is proposed. The device exhibits good electrical performances against mechanical stress. With gate programming, pseudo-diode performances are modulated correspondingly. Furthermore, effective synaptic weight updating strategy is proposed, resulting in a high recognition accuracy of ~91.7% for MNIST handwritten digits. The flexible nanocellulose gated pseudo-diode would have potentials in wearable intelligent platforms.