Design of Bandgap Reference Voltage Source with Low Temperature Drift and Low Offset

A low-cost bandgap reference voltage source (BG) design solution for the low-temperature drift and high-precision requirements is proposed in this article. By introducing a pair of MOS transistors operating in the sub-threshold region, high-order temperature compensation of the reference voltage is realized. At the same time, the influence of operational amplifier offset voltage on the reference accuracy is reduced. The BG circuit is designed based on 0.18 μm CMOS process. The simulation results show that the temperature drift of the BG is
$1.59\mathbf{ppm}/^{\circ}\mathbf{C}$
in the temperature range of
$-40\sim 125^{\circ}\mathbf{C}$
, and the power supply rejection ratio reaches -73 dB. The BG designed in this paper is suitable for industrial chips that need high-precision reference voltage.