2.0 kV/2.1 mΩ·cm2 Lateral p-GaN/AlGaN/GaN Hybrid Anode Diodes With Hydrogen Plasma Treatment

This letter demonstrates high-performance lateral p-GaN/AlGaN/GaN hybrid anode diodes (HPT-HADs) using a novel hydrogen plasma treatment. Without field plates (FPs) or passivation, the HPT-HAD with anode-cathode distance (
${L}_{\text {AC}}$
) of 20
$\mu \text{m}$
showed reverse breakdown voltage (
BV
) of 2.01 kV with differential specific ON-resistance (
${R}_{\text {ON,sp}}$
) of 2.09
$\text{m}\Omega \cdot $
cm
²
and power figure-of-merit (FOM) of 1.93 GW/cm
²
. Moreover, the device also exhibited excellent rectifying behaviors with an output current density of 598 mA/mm, an
${I}_{\text {ON}}/{I}_{\text {OFF}}$
ratio of
$\sim 10^{{10}}$
, an ideality factor (
$\eta$
) of 1.04, and a turn-on voltage (
${V}_{\text {T}}$
) of 1.3 V. The devices also had a negligible hysteresis due to the hydrogenated p-GaN cap layer and the low-damage plasma treatment. The p-GaN/AlGaN/GaN HAD anodes are promising for next-generation high-voltage power electronics.