A 3T eDRAM In-Memory Physically Unclonable Function With Spatial Majority Voting Stabilization

This letter presents a 3T eDRAM in-memory physically unclonable function (PUF) for low-cost Internet of Things (IoT) applications. The proposed design integrates PUF to eDRAM with a small peripheral overhead. With the subthreshold leakage of the bit-cell read path exploited as the entropy source, two adjacent 3T eDRAMs (with 2
$\times $
197 F
²
=394 F
²
area) race to generate the key bit. To overcome voltage and temperature variations, the spatial majority voting (SMV) is adopted. Implemented in 65-nm CMOS, the proposed eDRAM PUF achieves < 0.35% bit error rate (BER) across a voltage range of 1.0–1.2 V and temperature range of 0 °C–60 °C, presenting a low-cost and robust solution for IoT security.