n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C

The development of diamond power devices has been hindered due to the challenge in the achievement of n-type diamond electronic devices. In this study, we report the phosphorus-doped n-type diamond metal-semiconductor field-effect transistor (MESFET). We selectively grew heavily phosphorus doped diamond layer to improve the ohmicity of the source and drain contacts. The MESFET showed clear pinch-off and saturation characteristics. The transconductance was improved to be 0.1 $\mu \text{S}$ /mm by 100 times from room temperature to 300°C.