EML Based on Identical Epitaxial Layer, Side-Wall Grating and HSQ Planarization

We present an electroabsorption modulated laser based on an identical epitaxial scheme, side-wall grating, on- chip microwave probe interface, and a new low-permittivity planarization method. The modulation speed is significantly increased by reducing the electrode capacitance by planarizing with a 5-
$\mu \text{m}$
-thick HSQ layer. Furthermore, implementing the electrode with a direct ground-signal-ground probe interface provides a straightforward interconnection that obviates the need for an external circuit and bonding wires. The device operates at 1565 nm wavelength with stable single-mode lasing, no mode-hopping, and a side mode suppression ratio above 35 dB. An extinction ratio of 19.5 dB was recorded at the maximum modulator bias of −4 V. The electrical to optical power response of the modulated signal at–3-dBo demonstrated a 19 GHz bandwidth at an extinction ratio of 7 dB, which supports error-free data transmission up to 27 Gbit/s.