Synergistic Effects of Ionizing Dose and Displacement Damage on SiGe Heterojunction Bipolar Transistors

The individual and mixed radiation experiments of gamma rays and neutrons were performed to evaluate the irradiation synergistic effects (ISEs) of ionizing dose and displacement damage on SiGe heterojunction bipolar transistors (HBTs). These results indicate that the SiGe HBTs in this work experience a significant sensitivity of ISEs and the degradation of base current induced by mixed irradiation was more severe than that of simple artificial sum of individual irradiation. The degradation of SiGe HBTs induced by mixed radiation does not vary with
$V_{\mathrm {BE}}$
linearly, but is significant at low injection and weakened at high injection.