Quantifying the Effect of Nanofeature Size on the Electrical Performance of Black Silicon Emitter by Nanoscale Modeling

Nanostructured black silicon (b-Si) surfaces with an extremely low reflectance are a promising light-trapping solution for silicon solar cells. However, it is challenging to develop a high-efficiency front-junction b-Si solar cell due to the inferior electrical performance of b-Si emitters, which outweighs any optical gain. This article uses three-dimensional numerical nanoscale simulations, which are corroborated with experiment results, to investigate the effect of the surface nanofeature sizes on the b-Si emitter performance in terms of the sheet resistance (R
_sheet
) and the saturation current density (J
_0e
). We show that the specific surface area (SSA) is an effective parameter to evaluate the nanofeature size. A shallow surface nanofeature with a large SSA will contribute to a better electrical performance. We will show that b-Si emitter R
_sheet
measured by a four-point probe is not a measure of the doping level in the nanofeature, but is ruled by the doping level in the underlying substrate region. We also show that a small nanofeature with SSA > 100 μm
^-1
and height < 100 nm can lead to a relatively low J
_0e
(33 fA/cm
²
lower than the best b-Si results reported in the literature) by suppressing surface minority carrier density and minimizing the total Auger recombination loss.