Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory

The doping effect on AsSeGe OTS materials is comprehensively studied. While B, C, S doped selectors suffer a stringent trade-off among V
th
, I
OFF
and cycling endurance, Si and In doped selectors demonstrate an extremely low V
tS
(system threshold voltage when PCM is in SET state) and V
tR
(system threshold voltage when PCM is in RESET state) drift characteristics. We demonstrated true crosspoint operation (by half-V scheme) in a 1k by 1k cross-point ADM memory arrays from an In doped AsSeGe selector integrated with PCM with extremely low I
OFF
(~3nA from a total 100 crosspoint cells), wide V
tS
/V
tR
memory window (~2V main distribution memory window), 1E6 write cycles and low V
ts
and V
tR
drift characteristic (project<0.3V and 0.5V, respectively for one year) which is suggested for 3D crosspoint memory technology.