Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg

We have engineered dual gate (DG) MoS
2
transistors with scaled top and back gate stacks based on a surface physisorption ALD approach. A GdAlO
x
interfacial layer (IL) between the TMA ‘soak’ seed and the HfO
2
layer has been introduced to improve Vt control, hysteresis, and long channel mobility. Connected dual gate MOSFET with 1-2ML MoS
2
channel reaches
$420 \mu \mathrm{A}/\text{um}$
drain current and
$4.56 \mu \mathrm{F}/\text{cm}^{2}$
capacitance at 2.6V gate bias
$(\sim 5\times 10^{13}/\text{cm}^{2}$
sheet charge density).