Improving Edge Dead Domain and Endurance in Scaled HfZrOx FeRAM

Scaling in area and voltage and its interplay with reliability of metal-ferroelectric-metal (MFM) capacitors are explored for scalable embedded FeRAM technology below 2× nm node. Size-dependent degradation in ferroelectricity due to the edge dead domains is identified both experimentally and theoretically. Optimization strategies including edge interface and work function tuning are detailed. The scaled MFM shows promising potential for achieving high maximum
$P_{\mathrm{r}}$
(36
$\mu \mathrm{C}/\text{cm}^{2})$
, small area
$($0.16 $\mu \mathrm{m}^{2})$
, excellent reliability
$(> 10^{11})$
cycles; retention
$> 10$
years at 85°C), a low operating voltage of 1.7 V, and a high array yield (100 % in lkb test macro).