Improved Multi-bit Storage Reliablity by Design of Ferroelectric Modulated Anti-ferroelectric Memory

For the first time, we present a new concept of ferroelectric modulated anti-ferroelectric memory with independent 2-step state switching and large polarization as a promising option for multi-bit storage in advanced technology nodes. We show that 1) based on the Landau-Ginzburg-Devonshire (LGD) theory, 4 stable states of AFE with built-in field can be obtained. 2) non-volatile 2-bit storage is demonstrated in AFE due to bipolar built-in field introduced by FE polarization switching. 3) The
$F$
E+A
$F$
E device shows double-peak
$\mathrm{E}_{\mathrm{c}}$
distribution and large
$2\mathrm{P}_{\mathrm{r}}$
of 33.8
$\mu \mathrm{C}/\text{cm}^{2}$
with good process stability. 4) Benefit from independently step-by-step switching and large density of effective FE domain, the improved multi-bit storage reliability is verified by kinetic Monte Carlo modeling, compared to conventional multi-bit technology.