High Performance 4nm FinFET Platform (4LPE) with Novel Advanced Transistor Level DTCO for Dual-CPP/HP-HD Standard Cells

In this paper, a leading edge High performance 4nm FinFET Platform (4LPE) is demonstrated, featuring a novel advanced Transistor level DTCO (T-DTCO) in Middle-of-Line/Back-End-of-Line and careful process optimization, which enables dual-CPP/HP-HD standard cell with Gate contact-over-RX scheme. Compared to 5nm Platform (5LPE), Performance +7~10% and Power -12% gain are successfully obtained in both typical and low Vdd, as well as a flat layout dependence. 4LPE enhancement is accomplished by design-manufacturing favorable approaches. Moreover, newly adapted SRAM Ultra High-Density cell (UHD), Product IDDQ variation control and reliability verifications were completed for the technology delivery.