A $2.9\mu \mathrm{m}$ Pixel CMOS Image Sensor for Security Cameras with high FWC and 97 dB Single-Exposure Dynamic Range

We developed a new photo diode structure for the CMOS image sensors of security cameras with a pixel size of
$2.9\mu \mathrm{m}$
. It adds the following two structures: one is to form a strong electric field P/N junction on the full-depth deep-trench isolation side wall. The other is a dual-vertical-gate structure in which the full well capacity 60000e- is realized, while ensuring low-illuminance characteristics; the random noise is suppressed to 0.78e-. A dynamic range of 97 dB of one exposure was achieved. It also exhibits near-infrared optical characteristics.