Demonstration of a Free-layer Developed With Atomistic Simulations Enabling BEOL Compatible VCMA-MRAM with a Coefficient ≥100fJ/Vm

For the first time in voltage control of magnetic anisotropy magnetic random-access memory (VCMA-MRAM), a large coefficient of ≥ 100 fJ/Vm has been demonstrated in fully integrated, BEOL compatible, magnetic tunnel junctions (MTJ). This was achieved while maintaining a high TMR (180%) and thermal stability factor (
$\Delta > 40$
). VCMA-induced switching is also explored, showing the benefits for low power and ultrafast memory applications. This was enabled thanks to the development of a VCMA-MRAM specific free-layer (FL) which incorporates the insertion of transition metals at the CoFeB|MgO interface. The design of this FL was driven by atomistic simulations using an imec developed, non-perfect epitaxial stack model.